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Improvement of structural properties of Si/Ge superlattices
Show Abstract
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Eberl, K., Friess, E., Wegscheider, W., Menczigar, U., Abstreiter, G.
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1989 |
Thin
Solid Films
183 (1-2), pp. 95-103
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1
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Low temperature kinetics of Si(100) MBE growth
Show Abstract
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Jorke, H., Kibbel, H., Schäffler, F., Herzog, H.-J.
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1989 |
Thin
Solid Films
183 (1-2), pp. 307-313
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0
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Optical properties of perfect and imperfect SiGe superlattices
Show Abstract
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Wong, K.B., Turton, R.J., Jaros, M.
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1989 |
Thin
Solid Films
183 (1-2), pp. 49-55
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0
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Growth and transport properties of SimSb1 superlattices
Show Abstract
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Jorke, H., Kibbel, H.
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1989 |
Thin
Solid Films
183 (1-2), pp. 323-330
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0
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Heterogeneous nucleation sources in molecular beam epitaxy-grown
GexSi1-x/Si strained layer superlattices
Show Abstract
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Perovic, D.D., Weatherly, G.C., Baribeau, J.-M., Houghton, D.C.
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1989 |
Thin
Solid Films
183 (1-2), pp. 141-156
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2
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SiGe strained layer superlattices
Show Abstract
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Abstreiter, G.
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1989 |
Thin
Solid Films
183 (1-2), pp. 1-8
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0
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Investigation of SimGen strained monolayer superlattices by Rheed,
Raman, and X-ray techniques
Show Abstract
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Arbet, V., Chang, S.J., Wang, K.L.
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1989 |
Thin
Solid Films
183 (1-2), pp. 57-63
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0
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Optical properties of strained GeSi superlattices grown on (001)Ge
Show Abstract
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Pearsall, T.P., Hull, R., Bean, J.C., Bonar, J.M.
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1989 |
Thin
Solid Films
183 (1-2), pp. 9-16
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0
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Chemical ordering and boundary structure in crystalline SiGe
superlattices
Show Abstract
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Müller, E., Nissen, H.-U., Ospelt, M., von Känel, H., Stadelmann, P.
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1989 |
Thin
Solid Films
183 (1-2), pp. 165-170
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0
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Influence of substrate orientation on surface segregation process in
silicon-MBE
Show Abstract
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Nakagawa, K., Miyao, M., Shiraki, Y.
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1989 |
Thin
Solid Films
183 (1-2), pp. 315-322
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0
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Calculation of energies and Raman intensities of confined phonons in
SiGe strained layer superlattices
Show Abstract
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White, J., Fasol, G., Ghanbari, R.A., Gibbings, C.J., Tuppen, C.G.
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1989 |
Thin
Solid Films
183 (1-2), pp. 71-77
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0
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Photoluminescence characterization of molecular beam epitaxial
silicon
Show Abstract
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Lightowlers, E.C., Higgs, V., Gregson, M.J., Davies, G., Davey, S.T., Gibbings, C.J., Tuppen, C.G., (...), Kasper, E.
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1989 |
Thin
Solid Films
183 (1-2), pp. 235-254
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0
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Confined phonons in strained short-period (001) Si/Ge
superlattices
Show Abstract
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Bacsa, W., Ospelt, M., Henz, J., Von Känel, H., Wachter, P.
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1989 |
Thin
Solid Films
183 (1-2), pp. 65-70
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0
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Surface step structure of a lens-shaped Si(001) vicinal substrate
Show Abstract
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Sakamoto, K., Miki, K., Sakamoto, T.
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1989 |
Thin
Solid Films
183 (1-2), pp. 229-233
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0
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The measurement of surface boron on silicon wafers annealed in vacuum
and gas ambients
Show Abstract
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Robbins, D.J., Pidduck, A.J., Glasper, J.L., Young, I.M., Pickering, C.
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1989 |
Thin
Solid Films
183 (1-2), pp. 299-306
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0
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Electrical properties of gallium- and antimony-doped silicon layers,
grown by solid phase epitaxy in a molecular beam epitaxial growth
chamber
Show Abstract
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Casel, A., Kibbel, H., Schäffler, F.
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1989 |
Thin
Solid Films
183 (1-2), pp. 351-356
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0
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Phonons in Si/Ge superlattices: Theory and experiment
Show Abstract
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Montie, E.A., van de Walle, G.F.A., Gravesteijn, D.J., van Gorkum, A.A., Teesselink, W.J.O.
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1989 |
Thin
Solid Films
183 (1-2), pp. 105-110
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0
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Study of hole transport through minibands in symmetrically strained
GexSi1-x/Si superlattices
Show Abstract
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Park, J.S., Karunasiri, R.P.G., Wang, K.L.
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1989 |
Thin
Solid Films
183 (1-2), pp. 25-31
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0
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Equipment of a 3-inch silicon molecular beam epitaxial system with
scanning tunneling microscopy
Show Abstract
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Butz, R., Wagner, H., Besocke, K.
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1989 |
Thin
Solid Films
183 (1-2), pp. 339-344
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1
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Dopant incorporation kinetics and abrupt profiles during silicon
molecular beam epitaxy
Show Abstract
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Sundgren, J.-E., Knall, J., Ni, W.-X., Hasan, M.-A., Markert, L.C., Greene, J.E.
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1989 |
Thin
Solid Films
183 (1-2), pp. 281-297
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0
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