Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Lohner, TivadarNémeth, AttilaZolnai, ZsoltKalas, BenjáminRomanenko, AlekszejKhánh, Nguyen QuocSzilágyi, EditKótai, EndreAgócs, EmilTóth, ZsoltBudai, JuditPetrik, PéterFried, MiklósBársony, IstvánGyulai, József2024-03-282024-03-282022Materials Science In Semiconductor Processing. -152 (2022), p. 1-11. -Mater. Sci. Semicond. Process. - 1369-80011369-8001https://hdl.handle.net/2437/368005Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometryfolyóiratcikkopen access articlehttps://ebib.lib.unideb.hu/ebib/CorvinaWeb?action=cclfind&resultview=long&ccltext=idno+BIBFORM119917TermészettudományokFizikai tudományokhttps://linkinghub.elsevier.com/retrieve/pii/S1369800122005893Szerzőhttp://dx.doi.org/10.1016/j.mssp.2022.1070622024-03-2800086075660000485137065154