Some theoretical aspects of Nanotechnology, Thin Film Technologies& Simulation

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dc.contributor.advisorTrencséyi, Réka
dc.contributor.authorElsayed, Mohamed
dc.contributor.departmentDE--Természettudományi és Technológiai Kar--Fizikai Intézethu_HU
dc.date.accessioned2021-05-03T07:20:45Z
dc.date.available2021-05-03T07:20:45Z
dc.date.created2021-04-27
dc.description.abstractWhen modeling transport by diffusion or conduction in thin layers, large differences in dimensions of the different domains are common. If the model has a sandwich structure, we can replace the thinnest layers with a thin-layer approximation, provided that the difference in thickness is large.hu_HU
dc.description.courseElectrical Engineeringhu_HU
dc.description.degreeBSc/BAhu_HU
dc.format.extent56hu_HU
dc.identifier.urihttp://hdl.handle.net/2437/308090
dc.language.isoenhu_HU
dc.subjectnanotechnologyhu_HU
dc.subjectthin films
dc.subject.dspaceDEENK Témalista::Fizikahu_HU
dc.titleSome theoretical aspects of Nanotechnology, Thin Film Technologies& Simulationhu_HU
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